For this in-house project, we are interested in
improving the performance or modifying the capabilities of infrared detectors
in order to locate and identify dim and/or distant objects in space. One
characteristic we are very interested in is multicolor detection. To this end,
we have turned to a novel detector design that we have come to call a Lateral
Quantum Dot Infrared Photodetector (LQDIP). In this design, InAs quantum dots
are buried in a GaAs quantum well, which in turn is tunnel-coupled to another GaAs
quantum well. Photoexcited electrons from the quantum dots tunnel over to
the second well and are then swept out via a lateral (perpendicular to the
growth direction) bias voltage. This architecture should exhibit the ability to
tune to select infrared frequencies with reduced dark current and unity gain.
The lateral photocurrent is directed by a vertical (parallel to the growth
direction) gate voltage. In this interim report, we will discuss this detector
architecture, as well as our preliminary electrical and optical
characterization results from 200K to 77K.
Date of Report: September 24, 2012
Number of Pages: 17
Order Number: G1887
Price: $19.95
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